Method of manufacturing a thin film transistor

Details Method of manufacturing a thin film transistor Method of manufacturing a thin film transistor

2007-01-23

2007-01-23

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S589000, C438S678000, C438S687000, C438S675000, C438S677000, C438S508000, C438S508000

Reexamination Certificate

active

09709483

ABSTRACT:
The present invention discloses a method of manufacturing a thin film transistor, including: preparing a substrate and a mixed solution, the mixed solution having a reductant and a first metal; forming a photoresist pattern on the substrate; etching a portion of the substrate to form a groove using the photoresist pattern as a mask; depositing a second metal on the substrate, a height of the second metal being smaller than a depth of the groove; removing the photoresist pattern on the substrate and the second metal on the photoresist other than in the groove; and forming the first metal on the second metal in the groove by submerging the substrate in the mixed solution.

REFERENCES:
patent: 3632435 (1969-06-01), Eriksson
patent: 5247191 (1993-09-01), Yamazaki et al.
patent: 5364459 (1994-11-01), Senda et al.
patent: 5660706 (1997-08-01), Zhao et al.
patent: 5705230 (1998-01-01), Matanabe et al.
patent: 5821580 (1998-10-01), Kuwahara
patent: 5891804 (1999-04-01), Havemann et al.
patent: 6284652 (2001-09-01), Charneski et al.
patent: 6480253 (2002-11-01), Shigeta et al.
patent: 63274706 (1988-11-01), None
patent: 01017803 (1989-01-01), None
patent: 02-271637 (1990-11-01), None
patent: 04-170519 (1992-06-01), None
patent: 05-107553 (1993-04-01), None
patent: 05-265040 (1993-10-01), None
patent: 06-097197 (1994-04-01), None
patent: 1999-014212 (1999-02-01), None
patent: 1999-015599 (1999-03-01), None
Chan, Phase Transistion of Helium in aerogel, Czecyoslovak—Journal of Physic, vol. 46, pp. 2915-2922, 1996.
Cecilia Y. Mak; MRS Bulletin; “Electorless Copper Deposition on Metals and Metal Silicides”; Aug. 1994; (pp. 55-61).

Affiliated with

Also associated with

Rating

Method of manufacturing a thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3746261