Semiconductor device

Details Semiconductor device Semiconductor device

2007-03-13

2007-03-13

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S473000, C257S383000

Reexamination Certificate

active

11011140

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a T-shaped gate electrode, a moisture-proof insulating film, and an interlayer dielectric film. The T-shaped gate electrode has a leg portion joined to the semiconductor substrate and an overhanging head portion spaced from the semiconductor substrate. The T-shaped gate electrode includes a gate metal containing a material reactive with water. The moisture-proof insulating film is located only in the vicinity of the leg portion and covers a side surface of the leg portion of the T-shaped gate electrode. The interlayer dielectric film is located between the overhanging head portion of the T-shaped gate electrode and the semiconductor substrate and has a dielectric constant that is lower than that of the moisture-proof insulating film.

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patent: 6870232 (2005-03-01), Chan et al.
patent: 2002/0180005 (2002-12-01), Haematsu
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