Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-24
2007-07-24
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S003000, C438S608000, C438S778000
Reexamination Certificate
active
10968957
ABSTRACT:
The invention provides a substrate for an electronic device including a conductive oxide layer which is formed by epitaxial growth with cubic crystal (100) orientation or pseudo-cubic crystal (100) orientation and which contains a metal oxide having a perovskite structure, a method for manufacturing a substrate for an electronic device, and an electronic device provided with such a substrate for an electronic device. A substrate for an electronic device includes a Si substrate, a buffer layer which is formed by epitaxial growth on the Si substrate and which contains a metal oxide having a NaCl structure, and a conductive oxide layer which is formed by epitaxial growth with cubic crystal (100) orientation or pseudo-cubic crystal (100) orientation on the buffer layer and which contains a metal oxide having a perovskite structure. The Si substrate is preferably a (100) substrate or a (110) substrate from which a natural oxidation film is not removed. The buffer layer preferably has an average thickness of 10 nm or less.
REFERENCES:
patent: 5135906 (1992-08-01), Harada et al.
patent: 5225031 (1993-07-01), McKee et al.
patent: 5589284 (1996-12-01), Summerfelt et al.
patent: 5866238 (1999-02-01), Takayama et al.
patent: 6060735 (2000-05-01), Izuha et al.
patent: 6113690 (2000-09-01), Yu et al.
patent: 6674633 (2004-01-01), Sun et al.
patent: 6756139 (2004-06-01), Jia et al.
patent: 6960539 (2005-11-01), Higuchi et al.
patent: 2001/0013313 (2001-08-01), Droopad et al.
patent: 2002/0090816 (2002-07-01), Ashby et al.
patent: A 2001-122698 (2001-05-01), None
patent: 2001-122698 (2001-08-01), None
Higuchi et al. (JP-2001-122698) (Aug. 2001) (Translation).
Kado et al., “Heteroepitaxial growth of SrO films on Si substrates,” J. Appl. Phys., vol. 61, No. 6, pp. 2398-2400, Mar. 1987.
Nakagawara et al., “Effects of buffer layers in epitaxial growth of SrTiO3thin films on Si(100),” J. Appl. Phys., vol. 78, No. 12, pp. 7226-7230, Dec. 1995.
Mori et al., “Epitaxial Growth of SrTiO3Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method,” Japanese Journal of Applied Physics, vol. 30, No. 8A, pp. L1415-L1417, Aug. 1991.
Tambo et al., “Molecular Beam Epitaxy of SrTiO3Films on Si(100)-2×1 with SrO Buffer Layer,” Japanese Journal of Applied Physics, vol. 37, Part I, No. 8, pp. 4454-4459, Aug. 1998.
Matthee et al., “Orientation relationships of epitaxial oxide buffer layers on silicon (100) for high-temperature superconducting Yba2Cu3O7-xfilms,” Appl. Phys. Lett., vol. 61 (10), Sep. 7, 1992, pp. 1240-1242.
Haakenaasen et al., “High quality crystalline Yba2Cu3O7-8films on thin silicon substrates,” Appl. Phys. Lett., vol. 64 (12), Mar. 21, 1994, pp. 1573-1575.
Kwo et al., “Structure and properties of epitaxial Ba0.5TiO3/SrRuO3/ZrO2heterostructure on Si grown by off-axis sputtering,” Appl. Phys. Lett., vol. 67 (10), Sep. 4, 1995, pp. 1387-1389.
Higuchi Takamitsu
Iwashita Setsuya
Miyazawa Hiromu
Duong Khanh
Oliff & Berridg,e PLC
Seiko Epson Corporation
Smith Zandra V.
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