Programming method of a non-volatile memory device having a...

Details Programming method of a non-volatile memory device having a... Programming method of a non-volatile memory device having a...

2007-01-30

2007-01-30

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

Reexamination Certificate

active

10971201

ABSTRACT:
A programming method of a non-volatile memory device includes a pre-program of the non-volatile memory device, and a main-program of the pre-programmed non-volatile memory device. The non-volatile memory device may include a tunnel dielectric layer, a charge storage layer, a blocking dielectric layer, and a gate electrode, which are sequentially stacked on a semiconductor substrate. The charge storage layer may be an electrically-floated conductive layer, or a dielectric layer having a trap site. By performing a main-program after performing a pre-program, to increase the threshold voltage of the non-volatile memory device, the program current can be effectively reduced.

REFERENCES:
patent: 5751636 (1998-05-01), Naruke et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5801993 (1998-09-01), Choi
patent: 5963476 (1999-10-01), Hung et al.
patent: 6181604 (2001-01-01), Lu et al.
patent: 6222779 (2001-04-01), Saito et al.
patent: 6368918 (2002-04-01), Cunningham et al.
patent: 6614694 (2003-09-01), Yeh et al.
patent: 6807100 (2004-10-01), Tanaka
patent: 6847556 (2005-01-01), Cho
patent: 6894931 (2005-05-01), Yaegashi et al.
patent: 6927131 (2005-08-01), Kim
Chan et al. “A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device” IEEE Electron Device Letters, vol. 8, No. 3 1987, pp. 93-95.

Affiliated with

Also associated with

Rating

Programming method of a non-volatile memory device having a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programming method of a non-volatile memory device having a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming method of a non-volatile memory device having a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3745136