Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-11
2007-09-11
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S513000, C257S647000, C257SE29020
Reexamination Certificate
active
11119128
ABSTRACT:
An isolation trench in a semiconductor includes a first isolation trench portion having a first depth and having a first sidewall intersecting a surface of the semiconductor at a first angle. A second isolation trench portion extends within and below the first isolation trench portion. The second isolation trench portion has a second depth and includes a second sidewall. The second sidewall intersects the first sidewall at an angle with respect to the surface that is greater than the first angle. A dielectric material fills the first and second isolation trench portions.
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Jono Keiji
Ueda Hirokazu
Watanabe Hiroyuki
Micro)n Technology, Inc.
Pizarro Marcos D.
Wells St. John P.S.
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