Reference circuit for integrated memory arrays having virtual gr

Static information storage and retrieval – Read/write circuit – Differential sensing

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365104, 365185, G11C 700, G11C 1140

Patent

active

048687901

ABSTRACT:
A reference-column circuit for supplying a reference voltage to be used in sensing programming status of read-only-memory cells in a memory array having virtual-ground circuit connections is disclosed. The reference-column circuit includes an adjacent non-programmed memory cell having a common terminal with an identical non-programmed memory cell of prior-art circuitry. The additional memory cell and associated grounding circuit provide a compensating component of reference voltage to the input of a sense amplifier, the compensating component acting to eliminate a source of possible errors in sense amplifier transmission caused by non-programmed adjacent memory cells in the memory array.

REFERENCES:
patent: 4237547 (1980-12-01), Smith
patent: 4387447 (1983-06-01), Klaas et al.
patent: 4460981 (1984-07-01), Van Buskirk et al.
patent: 4703453 (1987-10-01), Shinoda et al.
patent: 4723225 (1988-02-01), Kaszubinski et al.

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