Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-01
2007-05-01
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257SE29275, C257SE29305
Reexamination Certificate
active
11188603
ABSTRACT:
A split gate memory cell can include a first gate electrode and a second gate electrode. The split gate memory cell can also include a first diffusion region underlying a trench in a semiconductor substrate, wherein the trench has a sidewall, and the first diffusion region lies closer to the first gate electrode than the second gate electrode. The split gate memory cell can further include a second diffusion region lying outside the trench, wherein the second diffusion region lies closer to the second gate electrode than the first gate electrode. The split gate memory cell can still further include a charge storage layer adjacent to the sidewall of the trench, wherein the charge storage layer includes discontinuous storage elements. Methods of forming and using the split gate memory cell are also disclosed.
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Freescale Semiconductor Inc.
Liu Benjamin Tzu-Hung
Tran Minhloan
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