Semiconductor device

Details Semiconductor device Semiconductor device

2007-05-01

2007-05-01

Hoang, Quoc (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S206000, C257SE21421

Reexamination Certificate

active

11245090

ABSTRACT:
A semiconductor device capable of integrally controlling thresholds of gate electrodes of transistors present in a region of one-conductivity-type and transistors present in a region of an reverse-conductivity-type while suppressing noise propagation is provided. A digital circuit region123and an analog circuit region121are provided on a P—Si substrate101. P-wells103and193and N-wells105and195are provided in the analog circuit region121. P-wells107and197and N-wells109and199are provided in the digital circuit region123. A mesh-like deep N-well111is provided to contact with lower surfaces of the P-well103and the N-well105. A mesh-like deep N-well113is provided to contact with lower surfaces of the P-well107and the N-well109.

REFERENCES:
patent: 5796147 (1998-08-01), Ono
patent: 6936898 (2005-08-01), Pelham et al.
patent: 7049699 (2006-05-01), Masleid et al.
patent: 07-058289 (1995-03-01), None
patent: WO 2004/061967 (2004-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3743039