Method of fabricating a conductive path in a semiconductor...

Details Method of fabricating a conductive path in a semiconductor... Method of fabricating a conductive path in a semiconductor...

2007-09-25

2007-09-25

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C438S675000

Reexamination Certificate

active

10931196

ABSTRACT:
A method for fabricating an ultra-small electrode or plug contact for use in chalcogenide memory cells specifically, and in semiconductor devices generally, in which disposable spacers are utilized to fabricate ultra-small pores into which the electrodes are formed. The electrodes thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms. The pores thus defined may then be used to fabricate a chalcogenide memory cell or other semiconductor devices.

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