Silicided body contact SOI device

Details Silicided body contact SOI device Silicided body contact SOI device

2007-05-01

2007-05-01

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S476000, C257SE29043, C438S149000, C438S151000, C438S167000

Reexamination Certificate

active

11074362

ABSTRACT:
A semiconductor device includes a dielectric layer, a semiconductor layer provided above the dielectric layer, a gate dielectric layer provided above the semiconductor layer, a gate electrode provided above the gate dielectric layer, a source region and a drain region provided in the semiconductor layer, a body region other than the source region and the drain region in the semiconductor layer, and a body contact region that divides the source region in a plurality of areas and joins to the body region, wherein the body contact region is formed of a compound of a semiconductor of the semiconductor layer and a metal.

REFERENCES:
patent: 5930605 (1999-07-01), Mistry et al.
patent: 6154091 (2000-11-01), Pennings et al.
patent: 6383850 (2002-05-01), Hirano
patent: 6603175 (2003-08-01), Kadowaki et al.
patent: 2002/0125534 (2002-09-01), Kim et al.
patent: 2003/0222308 (2003-12-01), Su et al.
patent: 2005/0250263 (2005-11-01), Liu et al.
patent: 2002-111005 (2002-04-01), None
patent: 2003-282876 (2003-10-01), None

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