Method of forming a pseudo SOI substrate and semiconductor...

Details Method of forming a pseudo SOI substrate and semiconductor... Method of forming a pseudo SOI substrate and semiconductor...

2007-09-11

2007-09-11

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S424000, C257SE21561

Reexamination Certificate

active

11122362

ABSTRACT:
The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a depth, forming a layer of insulating material within each of the plurality of trenches, the layer of insulating material having a thickness that is less than the depth of the trenches, and performing an anneal process on the substrate in a hydrogen environment to cause the silicon substrate material to merge above the layer of insulating material within the plurality of trenches to thereby define a pseudo SOI substrate.

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patent: 6829176 (2004-12-01), Callaway et al.
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patent: 7015147 (2006-03-01), Lee et al.
Sato et al., “Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique,”Japanese Journal of Applied Physics, 43:12-18, 2004.
Yeo et al., “80 nm 512M DRAM with Enhanced Data Retention Time Using Partially-Insulated Cell Array Transistor (PiCAT),”2004 Symposium on VLSI Technology Digest of Technical Papers, pp. 30-31, 2004.

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