Method for measuring silicide proportion, method for...

Details Method for measuring silicide proportion, method for... Method for measuring silicide proportion, method for...

Filed on

2007-04-10

Date issued

2007-04-10

Examiner

Lee, Hsien-Ming (Department: 2823)

Patent Class

Semiconductor device manufacturing: process

SubClass

With measuring or testing

Other Related Categories

C438S649000, C438S651000, C438S682000, C438S795000, C257SE21030, C257SE27140, C257SE27146

Type

Reexamination Certificate

Status

active

Patent number

10751893

Description

ABSTRACT:
A measurement substrate100in which a silicon oxide film102, a polysilicon layer103and a titanium silicide layer104are formed over a silicon substrate101in this order is prepared. The measurement substrate100is irradiated with X-rays so that the proportions of three types of silicides with different compositions in the titanium silicide layer104are measured based on the intensity of hard X-rays emitted from oxygen in the silicon oxide film102and the intensity of hard X-rays emitted from titanium in the titanium silicide layer104.

REFERENCES:
patent: 6173037 (2001-01-01), Brouwer
patent: 6610181 (2003-08-01), Besser et al.
patent: 05-209847 (1993-08-01), None
patent: 11-145231 (1999-05-01), None
N type semiconductor and P type semiconductor from www.answers.com search word: MOSFET.
Y. Hu et al., “Spectroscopic ellipsometry investigation of silicide formation by rapid thermal process”, J. Vac. Sci. Technol. B., 17(5), Sep./Oct. 1999, pp. 2284-2289.

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