Image sensor with surface regions of different doping

Details Image sensor with surface regions of different doping Image sensor with surface regions of different doping

2007-04-03

2007-04-03

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S461000, C257S463000, C257SE31003, C257SE31032

Reexamination Certificate

active

10878109

ABSTRACT:
A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.

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