Structure of vertical strained silicon devices

Details Structure of vertical strained silicon devices Structure of vertical strained silicon devices

2007-01-30

2007-01-30

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000

Reexamination Certificate

active

10605227

ABSTRACT:
A trench capacitor vertical-transistor DRAM cell in a SiGe wafer compensates for overhang of the pad nitride by forming an epitaxial strained silicon layer on the trench walls that improves transistor mobility, removes voids from the poly trench fill and reduces resistance on the bitline contact.

REFERENCES:
patent: 3602841 (1971-08-01), McGroddy
patent: 4665415 (1987-05-01), Esaki et al.
patent: 4853076 (1989-08-01), Tsaur et al.
patent: 4855245 (1989-08-01), Neppl et al.
patent: 4952524 (1990-08-01), Lee et al.
patent: 4958213 (1990-09-01), Eklund et al.
patent: 5006913 (1991-04-01), Sugahara et al.
patent: 5060030 (1991-10-01), Hoke
patent: 5081513 (1992-01-01), Jackson et al.
patent: 5108843 (1992-04-01), Ohtaka et al.
patent: 5134085 (1992-07-01), Gilgen et al.
patent: 5256550 (1993-10-01), Laderman et al.
patent: 5310446 (1994-05-01), Konishi et al.
patent: 5354695 (1994-10-01), Leedy
patent: 5371399 (1994-12-01), Burroughes et al.
patent: 5391510 (1995-02-01), Hsu et al.
patent: 5459346 (1995-10-01), Asakawa et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5471948 (1995-12-01), Burroughes et al.
patent: 5557122 (1996-09-01), Shrivastava et al.
patent: 5561302 (1996-10-01), Candelaria
patent: 5565697 (1996-10-01), Asakawa et al.
patent: 5571741 (1996-11-01), Leedy
patent: 5592007 (1997-01-01), Leedy
patent: 5592018 (1997-01-01), Leedy
patent: 5670798 (1997-09-01), Schetzina
patent: 5679965 (1997-10-01), Schetzina
patent: 5683934 (1997-11-01), Candelaria
patent: 5840593 (1998-11-01), Leedy
patent: 5847419 (1998-12-01), Imai et al.
patent: 5861651 (1999-01-01), Brasen et al.
patent: 5880040 (1999-03-01), Sun et al.
patent: 5940716 (1999-08-01), Jin et al.
patent: 5940736 (1999-08-01), Brady et al.
patent: 5946559 (1999-08-01), Leedy
patent: 5960297 (1999-09-01), Saki
patent: 5989978 (1999-11-01), Peidous
patent: 6008126 (1999-12-01), Leedy
patent: 6025280 (2000-02-01), Brady et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6066545 (2000-05-01), Doshi et al.
patent: 6090684 (2000-07-01), Ishitsuka et al.
patent: 6107143 (2000-08-01), Park et al.
patent: 6117722 (2000-09-01), Wuu et al.
patent: 6133071 (2000-10-01), Nagai
patent: 6165383 (2000-12-01), Chou
patent: 6221735 (2001-04-01), Manley et al.
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6246095 (2001-06-01), Brady et al.
patent: 6255169 (2001-07-01), Li et al.
patent: 6261964 (2001-07-01), Wu et al.
patent: 6265317 (2001-07-01), Chiu et al.
patent: 6274444 (2001-08-01), Wang
patent: 6281532 (2001-08-01), Doyle et al.
patent: 6284623 (2001-09-01), Zhang et al.
patent: 6284626 (2001-09-01), Kim
patent: 6313486 (2001-11-01), Kencke et al.
patent: 6319794 (2001-11-01), Akatsu et al.
patent: 6335239 (2002-01-01), Agahi et al.
patent: 6361885 (2002-03-01), Chou
patent: 6362082 (2002-03-01), Doyle et al.
patent: 6368931 (2002-04-01), Kuhn et al.
patent: 6403486 (2002-06-01), Lou
patent: 6403975 (2002-06-01), Brunner et al.
patent: 6406973 (2002-06-01), Lee
patent: 6429061 (2002-08-01), Rim
patent: 6461936 (2002-10-01), von Ehrenwall
patent: 6476462 (2002-11-01), Shimizu et al.
patent: 6483171 (2002-11-01), Forbes et al.
patent: 6493497 (2002-12-01), Ramdani et al.
patent: 6498358 (2002-12-01), Lach et al.
patent: 6501121 (2002-12-01), Yu et al.
patent: 6503833 (2003-01-01), Ajmera et al.
patent: 6506652 (2003-01-01), Jan et al.
patent: 6509618 (2003-01-01), Myers et al.
patent: 6521964 (2003-02-01), Jan et al.
patent: 6524935 (2003-02-01), Canaperi et al.
patent: 6531369 (2003-03-01), Ozkan et al.
patent: 6531740 (2003-03-01), Bosco et al.
patent: 6586300 (2003-07-01), Hummler et al.
patent: 6621392 (2003-09-01), Volant et al.
patent: 6635506 (2003-10-01), Volant et al.
patent: 6660582 (2003-12-01), Birner et al.
patent: 2001/0009784 (2001-07-01), Ma et al.
patent: 2002/0063292 (2002-05-01), Armstrong et al.
patent: 2002/0074598 (2002-06-01), Doyle et al.
patent: 2002/0086472 (2002-07-01), Roberds et al.
patent: 2002/0086497 (2002-07-01), Kwok
patent: 2002/0090791 (2002-07-01), Doyle et al.
patent: 2003/0032261 (2003-02-01), Yeh et al.
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2003/0057184 (2003-03-01), Yu et al.
patent: 2003/0067035 (2003-04-01), Tews et al.
Kern Rim, et al., “Transconductance Enhancement in Deep Submicron Strained-Si n-MOSFETs”. International Electron Devices Meeting, 26, 8, 1, IEEE, Sep. 1998.
Kern Rim, et al., “Characteristics and Device Design of Sub-100 nm Strained Si N- and PMOSFETs”. 2002 Symposium on VLSI Technology Digest of Technical Papers, IEEE, pp. 98-99.
Gregory Scott, et al., “NMOS Drive Current Reduction Caused by Transistor Layout and Trench Isolation Induced Stress”. International Electron Devices Meeting, 34.4.1, IEEE, Sep. 1999.
F. Ootsuka, et al., “A Highly Dense, High-Performance 130nm Node CMOS Technology for Large Scale System-on-a-Chip Application”. International Electron Devices Meeting, 23.5.1, IEEE, Apr. 2000.
Shinya Ito, et al., “Mechanical Stress Effect of Etch-Stop Nitride and its Impact on Deep Submicron Transistor Design.” International Electron Devices Meeting, 10.7.1, IEEE, Apr. 2000.
A. Shimzu, et al., “Local Mechanical-Stress Control (LMC): A New Technique for CMOS-Performance Enhancement”. International Electron Devices Meeting, IEEE, Mar. 2001.
K. Ota, et al., “Novel Locally Strained Channel Technique for High Performance 55nm CMOS.” International Electron Devices Meeting, 2.2.1, IEEE, Feb. 2002.
G. Zhang, et al., “A New ‘Mixed-Mode’ Reliability Degradation Mechanism in Advanced Si and SiGe Bipolar Transistors”. IEEE Transactions on Electron Devices, vol. 49, No. 12, Dec. 2002, pp. 2151-2156.
H.S. Momose, et al., “Temperature Dependence of Emitter-Base Reverse Stress Degradation and its Mechanism Analyzed by MOS Structures”. Paper 6.2, pp. 140-143.
C.J. Huang, et al., “Temperature Dependence and Post-Stress Recovery of Hot Electron Degradation Effects in Bipolar Transistors”.IEEE1991 Bipolar Circuits and Technology Meeting 7.5, pp. 170-173.
S.R. Sheng, et al., “Degradation and Recovery of SiGe HBTs Following Radiation and Hot-Carrier Stressing”. pp. 14-15.
Z. Yang, et al., “Avalanche Current Induced Hot Carrier Degradation in 200 GHz SiGe Heterojunction Bipolar Transistors”. pp. 1-5.
H. Li, et al., “Design of W-Band VCOs with High Output Power for Potential Application in 77 GHz Automotive Radar Systems”. 2003 IEEE GaAs Digest, pp. 263-266.
H. Wurzer, et al., “Annealing of Degraded npn-Transistors- Mechanisms and Modeling”. IEEE Transactions on Electron Devices, vol. 41, No. 4, Apr. 1994, pp. 533-538.
B. Doyle, et al., “Recovery of Hot-Carrier Damage in Reoxidized Nitrided Oxide MOSFETs”. IEEE Electron Device Letters, vol. 13, No. 1, Jan. 1992, pp. 38-40.
H.S. Momose, et al., “Analysis of the Temperature Dependence of Hot-Carrier-Induced Degradation in Bipolar Transistor for Bi-CMOS”. IEEE Transactions on Electron Devices, vol. 41, No. 6, Jun. 1994, pp. 978-987.

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