Method of manufacturing a semiconductor device including a...

Details Method of manufacturing a semiconductor device including a... Method of manufacturing a semiconductor device including a...

2007-04-24

2007-04-24

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S593000, C257SE21179

Reexamination Certificate

active

10688965

ABSTRACT:
There are provided a gate dielectric film formed on a semiconductor substrate; a gate electrode including: a first electrode layer formed on the gate dielectric film, a dielectric film having a thickness of 5 Å or more and 100 Å or less, and formed on the first electrode layer, and a second electrode layer formed on the dielectric film; and a source and drain regions formed in the semiconductor substrate at both sides of the gate electrode.

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Notification of Reason for Rejection issued by the Japanese Patent Office, mailed Mar. 14, 2006, for Japanese Patent Application No. 203945/2003, and English-language translation thereof.
Decision of Rejection issued by the Japanese Patent Office on Jan. 30, 2007, in Japanese Patent Application No. 2003-203945, and English-language translation thereof.

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