Method of manufacturing light emitting device

Details Method of manufacturing light emitting device Method of manufacturing light emitting device

2007-09-04

2007-09-04

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S028000, C438S976000, C257SE33059, C257SE33060

Reexamination Certificate

active

10073284

ABSTRACT:
A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.

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