Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2007-09-11

2007-09-11

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S765000, C257SE21209

Reexamination Certificate

active

11129939

ABSTRACT:
A method of manufacturing flash memory devices, comprises the steps of forming an oxide film on a semiconductor substrate, performing a pre-annealing process under N2gas atmosphere, nitrifying the oxide film by performing a main annealing process under N2O atmosphere having the flow rate of 5 to 15 slm for 10 to 60 minutes, thus forming an oxynitride film, and performing a post-annealing process under N2gas atmosphere.

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