Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-03-20
2007-03-20
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S455000, C438S311000
Reexamination Certificate
active
10734246
ABSTRACT:
To provide a method for manufacturing an electro-optical substrate having high reliability with high yield. The method for manufacturing an electro-optical substrate including a composite base plate obtained by joining a support plate to a semiconductor plate having single-crystal silicon precursor layer (semiconductor precursor layer) can include a step of forming a light-shielding layer, having a predetermined pattern, on the support plate, a step of forming an insulating layer on the light-shielding layer having the predetermined pattern, a step of providing semiconductor layers on the insulating layer, a step of oxidizing parts of the semiconductor layers to form oxide layers, and a step of removing the oxide layers. The oxide layers can have a thickness smaller than that of the insulating layer.
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Nguyen Thanh
Seiko Epson Corporation
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