Magnetoresistive effect element and magnetic memory

Details Magnetoresistive effect element and magnetic memory Magnetoresistive effect element and magnetic memory

2007-09-04

2007-09-04

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

11373305

ABSTRACT:
It is made possible to provide a highly reliable magnetoresistive effect element and magnetic memory that operate with low power consumption and low current writing. The magnetoresistive effect element includes: a magnetization free layer including at least two magnetic layers subject to antiferromagnetic coupling and a non-magnetic layer provided between the magnetic layers; a tunnel barrier layer provided on one surface of the magnetization free layer; a first magnetization pinned layer provided on an opposite surface of the tunnel barrier layer from the magnetization free layer; a non-magnetic metal layer provided on an opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided on an opposite surface of the non-magnetic metal layer from the magnetization free layer. The first and second magnetization pinned layers are substantially the same in magnetization direction. The non-magnetic metal layer includes Cu, Ag, Au, or an alloy of them. The non-magnetic layer in the magnetization free layer includes Ru, Rh, Ir or an alloy of them.

REFERENCES:
patent: 6256223 (2001-07-01), Sun
patent: 6611405 (2003-08-01), Inomata et al.
patent: 6714444 (2004-03-01), Huai et al.
patent: 6751074 (2004-06-01), Inomata et al.
patent: 6807033 (2004-10-01), Zhu
patent: 6956766 (2005-10-01), Nakamura et al.
patent: 6987653 (2006-01-01), Inomata et al.
patent: 7016161 (2006-03-01), Hayakawa
patent: 7038894 (2006-05-01), Inomata et al.
patent: 2005/0057960 (2005-03-01), Saito et al.
patent: 2005/0195532 (2005-09-01), Sugiyama et al.
U.S. Appl. No. 11/228,326, filed Sep. 19, 2005, Tomoaki Inokuchi et al.
U.S. Appl. No. 11/368,383, filed Mar. 7, 2006, Yoshiaki Saito et al.

Affiliated with

Also associated with

Rating

Magnetoresistive effect element and magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive effect element and magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive effect element and magnetic memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3733001