Semiconductor memory device including an SOI substrate

Details Semiconductor memory device including an SOI substrate Semiconductor memory device including an SOI substrate

2007-07-10

2007-07-10

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S288000, C257S296000, C257SE21646, C257SE27084, C365S051000, C365S174000, C365S189090, C365S156000

Reexamination Certificate

active

11333351

ABSTRACT:
A semiconductor memory device includes a plurality of N and P channel MOS transistors. The plurality of MOS transistors are formed on an SOI (Silicon On Insulator) substrate. Each MOS transistor includes a source region, a drain region, and a body region located between the source region and the drain region. The body region of at least one N channel MOS transistor is electrically fixed. The body region of at least one P channel MOS transistor is rendered floating.

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