Processes for treating morphologically-modified silicon...

Details Processes for treating morphologically-modified silicon... Processes for treating morphologically-modified silicon...

2007-03-20

2007-03-20

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C216S058000, C216S079000, C438S707000, C438S710000, C438S719000

Reexamination Certificate

active

10975947

ABSTRACT:
Processes for treating a morphologically-modified surface of a silicon upper electrode of a plasma processing chamber include exposing the surface to a gas composition containing at least one gas-phase halogen fluoride. The gas composition is effective to remove silicon from the morphologically-modified surface and restore the surface state.

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