Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-04-17
2007-04-17
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189040
Reexamination Certificate
active
10969184
ABSTRACT:
A method of operating a dynamic random access memory cell is disclosed. The true logic state of a stored bit is rewritten to a first storage node of the memory cell and the complementary logic state of the stored bit is rewritten to a second storage node of the memory cell. One of the acts of rewriting is achievable faster than the other and the rewriting of the true and complementary logic states is completed upon achieving the one act of rewriting that is faster than the other.
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Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Nguyen Van-Thu
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