Semiconductor memory device for low power condition

Details Semiconductor memory device for low power condition Semiconductor memory device for low power condition

2007-04-10

2007-04-10

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Read/write circuit

C365S210130, C365S203000

Reexamination Certificate

active

11030606

ABSTRACT:
A semiconductor memory device for reading or writing data from or to a memory cell includes at least one cell array having a plurality of memory cells for outputting a stored data to one of a bit line and a bit line bar in response to inputted address and command; at least one reference cell array for outputting a reference signal to the other of the bit line and the bit line bar; a precharge block for precharging the bit line and the bit line bar as a ground; and a sense amplifying block for sensing and amplifying the data by using a core voltage for operating the semiconductor memory device and a high voltage having a higher voltage level than the core voltage.

REFERENCES:
patent: 5235221 (1993-08-01), Zagar
patent: 5991188 (1999-11-01), Chung et al.
patent: 6041002 (2000-03-01), Maejima
patent: 6055200 (2000-04-01), Choi et al.
patent: 6078538 (2000-06-01), Ma et al.
patent: 6198677 (2001-03-01), Hsu et al.
patent: 6411543 (2002-06-01), Narui et al.
patent: 6678199 (2004-01-01), Joo
patent: 6738300 (2004-05-01), Barth, Jr.
patent: 6801446 (2004-10-01), Choo et al.
patent: 6845051 (2005-01-01), Komura
patent: 2001/0033510 (2001-10-01), Allen et al.
patent: 2005/0018470 (2005-01-01), Jung
patent: 2004-265533 (2004-09-01), None
patent: 2000-0048171 (2000-07-01), None
“A 300MHz Multi-Banked eDRAM Macro Featruing GND Sense, Bit-Line Twisting and Direct Reference Cell Write” by John Barth et al.;2002 IEEE International Solid-State Circuits Conference;ISSCC 2002/ Session 9 / Dram and Ferroelectric Memories/ 9.3.

Affiliated with

Also associated with

Rating

Semiconductor memory device for low power condition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device for low power condition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device for low power condition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3730993