MRAM memory with residual write field reset

Details MRAM memory with residual write field reset MRAM memory with residual write field reset

2007-04-17

2007-04-17

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

11297203

ABSTRACT:
A magnetoresistive random access memory (MRAM) (900) that is susceptible to a residual magnetic field is compensated during a write operation. A first magnetic field (208) is applied to a memory cell during a first time period, the first magnetic field having a first direction (y) and a first magnitude. A second magnetic field (212) is applied to the memory cell during a second time period and having a second direction (x) and a second magnitude. A third magnetic field (702) is applied to the memory cell during a third time period, wherein the third time period overlaps at least a portion of the second time period, the third magnetic field having a third direction (−y) which is approximately opposite to the first direction of the first magnetic field. Currents are selectively applied through conductors in the memory cell to apply the three magnetic fields.

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