Thermally written magnetic memory device

Details Thermally written magnetic memory device Thermally written magnetic memory device

2007-03-20

2007-03-20

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

10898279

ABSTRACT:
A thermally written magnetic memory device is disclosed. The thermally written magnetic memory device includes a plurality of thermally written magnetic tunnel junction devices. Each thermally written magnetic tunnel junction device includes a super-paramagnetically stable data layer. The data layer includes a high coercivity at a read temperature such that a bit of data previously written to the data layer at a higher write temperature can be read from the data layer at the read temperature. The data layer has a low coercivity at the higher write temperature and data is written to the data layer at the higher write temperature. Therefore, at the lower read temperature, the thermally written magnetic memory device is a read only non-volatile memory and the data stored therein can be read many times but new data cannot be written to the data layer at the read temperature.

REFERENCES:
patent: 2006/0083056 (2006-04-01), Daughton et al.
Jorg F Loffler, et al; Random and exchange anisotropy in consolidated nanostructured Fe and Ni: Role of grain size and trace oxides on the magnetic properties; Physical Review B, vol. 57, No. 5, Feb. 1, 1998.
Z. Celinski, et al; Exchange Biasing in Ferromagnet/antiferromagnet Fe/KMnF3; Rec'd Sep. 18, 1998; rec'd revised form Feb. 15, 1999; Journal of Magnetism and Magnetic Material 202 (1999) 480-484.
O. De Haas, et al; Rotational Magnetization Processes in Exchange Biased; www.sciencedirect.com; Journal of Magnetism and Magnetic Materials 260 (2003) 380-385.

Affiliated with

Also associated with

Rating

Thermally written magnetic memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thermally written magnetic memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermally written magnetic memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3730332