Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2007-05-15
2007-05-15
Whitehead Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S669000, C257S787000, C438S033000, C438S068000, C438S113000, C438S114000, C438S117000, C438S465000
Reexamination Certificate
active
10861523
ABSTRACT:
Semiconductor devices,-semiconductor wafers, and semiconductor modules are provided: wherein the semiconductor device has a small warp; damages at chip edge and cracks in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility.The semiconductor device17comprising: a semiconductor chip64;a porous stress relaxing layer3provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer2provided on the stress relaxing layer and connected to the electrodes; and external terminals10provided on the circuit layer; wherein an organic protecting film7is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip6,and the protecting film7are exposed outside on a same plane.
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Anjoh Ichiro
Eguchi Shuji
Ishii Toshiaki
Kokaku Hiroyoshi
Nagai Akira
Antonelli, Terry Stout & Kraus, LLP.
Jr. Carl Whitehead
Mitchell James M.
Renesas Technology Corp.
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