Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-29
2007-05-29
Sarkar, Asok Kumar (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27112
Reexamination Certificate
active
11029648
ABSTRACT:
The present invention provides a semiconductor wafer comprising an insulated board of sapphire or the like having translucency, which is provided with a positioning orientation flat at a peripheral portion thereof, and a silicon thin film formed over the entire one surface of the insulated board. In the semiconductor wafer, ions are implanted in an area containing the orientation flat at a peripheral portion of the silicon thin film to amorphize silicon. Thus, the translucency at the amorphized spot is eliminated and accurate positioning using the conventional optical sensor can be performed.
REFERENCES:
patent: 4442178 (1984-04-01), Kimura et al.
patent: 4662059 (1987-05-01), Smeltzer et al.
patent: 5877094 (1999-03-01), Egley et al.
patent: 6238935 (2001-05-01), Egley et al.
patent: 6864534 (2005-03-01), Ipposhi et al.
patent: 6953948 (2005-10-01), Sakaguchi
patent: 2001/0038153 (2001-11-01), Sakaguchi
patent: 8-254415 (1996-10-01), None
patent: 11-220114 (1999-08-01), None
patent: 2000-36585 (2000-02-01), None
Oki Electric Industry Co. Ltd.
Rabin & Berdo P.C.
Sarkar Asok Kumar
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