Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-20
2007-03-20
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000, C257S333000, C257S334000
Reexamination Certificate
active
10952105
ABSTRACT:
A field effect transistor includes a gate that is formed in a channel region of an active region defined on a substrate. A source is formed at a first surface portion of the active region that is adjacently disposed at a first side face of the gate. A drain is formed at a second surface portion of the active region that is opposite to the first surface portion with respect to the gate. The drain has a protruded portion that is protruded from a surface portion of the substrate.
REFERENCES:
patent: 5798278 (1998-08-01), Chan et al.
patent: 2000-40817 (2000-02-01), None
patent: 00251754 (2000-01-01), None
Chang Dong-Ryul
Lee Soo-Cheol
Lee Tae-Jung
Mills & Onello LLP
Tran Thien F.
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