Method of making a SOI silicon structure

Details Method of making a SOI silicon structure Method of making a SOI silicon structure

2007-01-09

2007-01-09

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S053000, C438S508000, C438S704000, C257S419000

Reexamination Certificate

active

11151680

ABSTRACT:
A process for making a microelectromechanical device having a moveable component defined by a gap pattern in a semiconductor layer of a silicon-on-insulator wafer involves the use of a plurality of deep reactive ion etching steps at various etch depths that are used to allow a buried oxide layer of the silicon-on-insulator wafer to be exposed in selected areas before the entire moveable component of the resulting device is freed for movement. This method allows wet release techniques to be used to remove the buried oxide layer without developing stiction problems. This is achieved by utilizing deep reactive ion etching to free the moveable component after a selected portion of the buried oxide layer has been removed by wet etching.

REFERENCES:
patent: 6815243 (2004-11-01), Lucak et al.
patent: 6841861 (2005-01-01), Brady
patent: 6916728 (2005-07-01), Gogoi et al.

Affiliated with

Also associated with

Rating

Method of making a SOI silicon structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a SOI silicon structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a SOI silicon structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3728359