Semiconductor device including field-effect transistor using...

Details Semiconductor device including field-effect transistor using... Semiconductor device including field-effect transistor using...

2007-09-04

2007-09-04

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000, C257S377000, C257S382000, C257S384000, C257S412000, C257S413000

Reexamination Certificate

active

10917405

ABSTRACT:
An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the semiconductor substrate in the element region. A gate electrode is formed on the gate insulating film. Source/drain regions are formed to be separated from each other in a surface region of the semiconductor substrate. The source/drain regions sandwich a channel region formed below the gate insulating film. Gate sidewall films are formed on the two side surfaces of the gate electrode. Silicide films are formed on the source/drain regions so as to be separated from the element isolation region.

REFERENCES:
patent: 6777759 (2004-08-01), Chau et al.
patent: 11-8387 (1999-01-01), None

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