Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-18
2007-09-18
Fahmy, Wael M. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S598000, C438S637000, C438S641000, C438S668000, C438S675000, C438S687000
Reexamination Certificate
active
11049615
ABSTRACT:
A process produces metallic interconnects and contact surfaces on electronic components using a copper-nickel-gold layer structure. The copper core of the interconnects and contact surfaces is deposited by electroplating by means of a first resist mask made from positive resist. The copper core of the interconnects and contact surfaces is surrounded by a nickel-gold layer by means of a second resist mask. The interconnects and contact surfaces are produced by means of two resist masks arranged one on top of the other, in such a way that the copper which forms the core of the interconnect is completely surrounded by the nickel-gold layer, which extends above the copper core, and an adjoining layer that extends beneath the copper core and comprises a diffusion barrier and seed layer.
REFERENCES:
patent: 4861425 (1989-08-01), Greer et al.
patent: 5969422 (1999-10-01), Ting et al.
patent: 6663787 (2003-12-01), You et al.
patent: 2003/0092274 (2003-05-01), Brintzinger
patent: 2004/0067604 (2004-04-01), Ouellet et al.
patent: 2005/0186786 (2005-08-01), Brintzinger et al.
patent: 101 56 054 (2003-11-01), None
Wong, K.K.H., et al., “Metallization by plating for high-performance multichip modules,” IBM J. Res. Develop., vol. 42, No. 5, Sep. 1998, pp. 587-596.
Brintzinger Axel
Trovarelli Octavio
Fahmy Wael M.
Infineon - Technologies AG
McCall-Shepard Sonya
Slater & Matsil L.L.P.
LandOfFree
Process for producing metallic interconnects and contact... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing metallic interconnects and contact..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing metallic interconnects and contact... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3728248