Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-08
2007-05-08
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S411000, C257S616000, C257SE29134, C257SE29162
Reexamination Certificate
active
10997440
ABSTRACT:
Provided is a non-planar transistor with a multi-gate structure that includes a germanium channel region, and a method of manufacturing the same. The non-planar transistor includes a silicon body and a channel region that covers exposed surfaces of the silicon body. The channel region is formed of a germanium layer and includes a first channel region and a second channel region. In order to form the germanium channel region, a mesa type active region is formed on the substrate, and a germanium layer is formed to cover two sidewalls and an upper surface of the active region.
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Yang, Fu-Liang, et al., “35nm CMOS FinFETs,” 2002 Symposium On VLSI Technology Digest of Technical Papers, pp. 104-105.
Mills & Onello LLP
Ngo Ngan V.
Samsung Electonics Co., Ltd.
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