Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-18
2007-09-18
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S380000, C257S903000, C257S904000, C257SE27016, C257SE27046
Reexamination Certificate
active
10927638
ABSTRACT:
A contact connected to a word line is formed on a gate electrode of an access transistor of an SRAM cell. The contact passes through an element isolation insulating film to reach an SOI layer. A body region of a driver transistor and that of the access transistor are electrically connected with each other through the SOI layer located under the element isolation insulating film. Therefore, the access transistor is in a DTMOS structure having the gate electrode connected with the body region through the contact, which in turn is also electrically connected to the body region of the driver transistor. Thus, operations can be stabilized while suppressing increase of an area for forming the SRAM cell.
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S. Maeda et al.; Impact of 0.18 μm SOI CMOS Technology Using Hybrid Trench Isolation with High Resistivity Substrate on Embedded RF/Analog Applications;2000 Symposium on VLSI Technology Digest of Technical Papers; c. 2000; pp. 154-155; Hyogo, Japan.
Mukesh Khare et al.; “A High Performance 90nm SOI Technology with 0.992 μm26T-SRAM Cell”; c. 2002; pp. 407-410.
Yuuichi Hirano et al.; “Impact of Actively Body-bias Controlled (ABS) SOI SRAM by Using Direct Body Contact Technology for Low-Voltage Application”; pp. 2.4.1-2.4.4.
Hirano Yuuichi
Ipposhi Takashi
Maegawa Shigeto
Nii Koji
McDermott Will & Emery LLP
Ngo Ngan V.
Renesas Technology Corp.
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