Solid-state imaging device and camera

Details Solid-state imaging device and camera Solid-state imaging device and camera

2007-04-03

2007-04-03

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S510000

Reexamination Certificate

active

10930814

ABSTRACT:
A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.

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