Semiconductor device with a self-aligned contact (SAC)...

Details Semiconductor device with a self-aligned contact (SAC)... Semiconductor device with a self-aligned contact (SAC)...

Filed on

2007-05-08

Date issued

2007-05-08

Examiner

Tran, Thien F (Department: 2811)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S298000, C257S300000, C257S301000

Type

Reexamination Certificate

Status

active

Patent number

11055626

Description

ABSTRACT:
A semiconductor device includes a semiconductor substrate, at least two gate electrode sections formed adjacent to each other on the surface of the semiconductor substrate, a first diffusion region formed in the surface area of the semiconductor substrate, except in the gate electrode sections, a substrate contact layer formed between the gate electrode sections in self-alignment therewith, a first side-wall insulating film formed on one of side-wall portions of each of the gate electrode sections, and a second side-wall insulating film formed on other of the side-wall portions of each of the gate electrode sections. The device further includes a second diffusion region whose conductivity type is opposite to that of the first diffusion region, formed in the surface area of the semiconductor substrate and corresponding to each of the edges of the gate electrode sections, the edges corresponding to the other of the side-wall portions.

REFERENCES:
patent: 5843815 (1998-12-01), Liaw
patent: 6297530 (2001-10-01), Akatsu et al.
patent: 6329235 (2001-12-01), Kuo
patent: 6444548 (2002-09-01), Divakaruni et al.

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