Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2007-05-01

2007-05-01

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S319000, C257SE21680, C365S185220

Reexamination Certificate

active

11257020

ABSTRACT:
A non-volatile semiconductor memory device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, a plurality of memory cells formed on the semiconductor substrate, a plurality of first assist gates extending toward the memory cell, a connection portion connecting end portions of the first assist gates, a second assist gate extending toward the memory cell, a first select transistor controlling whether to apply a voltage to an area under the first assist gate, a second select transistor controlling whether to apply a voltage to an area under the second assist gate, and an impurity region. The insulating film formed under an intersection area of the connection portion and the impurity region has a thickness larger than the insulating film formed under the first and second assist gates. A non-volatile semiconductor memory device capable of ensuring a writing speed as well as reliability can thus be obtained.

REFERENCES:
patent: 6878988 (2005-04-01), Lee et al.
patent: 2000-188346 (2000-07-01), None
patent: 2000-269361 (2000-09-01), None
patent: 2001-044395 (2001-02-01), None
Sasago et al.; “90-nm-node Multi-Level AG-AND Type Flash Memory with Cell Size of True 2F2/bit and Programming Throughput of 10 MB/s”;Technical Digest of International Electron Devices Meeting: c. 2003; pp. 34.2.1-34.2.4; IEEE Catalog No. 03CH37457.

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