Semiconductor device and method for preparing the same

Details Semiconductor device and method for preparing the same Semiconductor device and method for preparing the same

2007-04-24

2007-04-24

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S250000

Reexamination Certificate

active

11040946

ABSTRACT:
A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor and a holding capacitance with three or more capacitance electrodes is provided. Before forming the source electrode and the drain electrode, a crystalline silicon film for relaxing the stress is formed, then a contact hole connecting to the semiconductor film of the thin film transistor is opened, and a metal film to be the source electrode and the drain electrode is formed.

REFERENCES:
patent: 5648674 (1997-07-01), Weisfield et al.
patent: 5667597 (1997-09-01), Ishihara
patent: 5734449 (1998-03-01), Jang
patent: 5815226 (1998-09-01), Yamazaki et al.
patent: 6121652 (2000-09-01), Suzawa
patent: 6137551 (2000-10-01), Jeong
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6407442 (2002-06-01), Inoue et al.
patent: 6411351 (2002-06-01), Zhang et al.
patent: 6448116 (2002-09-01), Wong
patent: 6498097 (2002-12-01), Park et al.
patent: 6522066 (2003-02-01), Sheu et al.
patent: 6537840 (2003-03-01), Tseng
patent: 2002/0025614 (2002-02-01), Jang et al
patent: 2002/0030188 (2002-03-01), Hayashi et al.
patent: 2002/0050599 (2002-05-01), Lee et al.
patent: 2003/0234424 (2003-12-01), Suzawa et al.
patent: 2004/0026740 (2004-02-01), Kawasaki et al.
patent: 5-243519 (1993-09-01), None
patent: 7-074247 (1995-03-01), None
patent: 10-270363 (1998-10-01), None
U.S. Appl. No. 09/535,836, Ohtani et al, filed Mar. 28, 2000, including specification, abstract, claims, drawings and PTO filing receipt.

Affiliated with

Also associated with

Rating

Semiconductor device and method for preparing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for preparing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for preparing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3726212