Resistive memory for low-voltage applications

Details Resistive memory for low-voltage applications Resistive memory for low-voltage applications

2007-05-01

2007-05-01

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S304000, C257S311000, C257S300000, C438S250000, C438S393000

Reexamination Certificate

active

11041760

ABSTRACT:
Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

REFERENCES:
patent: 5350537 (1994-09-01), Itoh et al.
C.P. Jarrett et al., Field Effect Measurements in Doped Conjugated Polymer Films: Assessment of Charge Carrier Mobilities, 1995 American Institute of Physics, Jun. 15, 1995, pp. 6289-6294.

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