Methods of forming reacted conductive gate electrodes

Details Methods of forming reacted conductive gate electrodes Methods of forming reacted conductive gate electrodes

2007-05-15

2007-05-15

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S157000

Reexamination Certificate

active

11073976

ABSTRACT:
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.

REFERENCES:
patent: 4010045 (1977-03-01), Ruehrwein
patent: 4522662 (1985-06-01), Bradbury et al.
patent: 4710788 (1987-12-01), Dambkes et al.
patent: 4717681 (1988-01-01), Curran
patent: 4749441 (1988-06-01), Christenson et al.
patent: 4755478 (1988-07-01), Abernathey et al.
patent: 4786615 (1988-11-01), Liaw et al.
patent: 4803539 (1989-02-01), Psaras et al.
patent: 4963506 (1990-10-01), Liaw et al.
patent: 4969031 (1990-11-01), Kobayashi et al.
patent: 4987462 (1991-01-01), Kim et al.
patent: 4990979 (1991-02-01), Otto
patent: 4997776 (1991-03-01), Harame et al.
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5034348 (1991-07-01), Hartswick et al.
patent: 5089872 (1992-02-01), Ozturk et al.
patent: 5091767 (1992-02-01), Bean et al.
patent: 5108946 (1992-04-01), Zdebel et al.
patent: 5155571 (1992-10-01), Wang et al.
patent: 5166084 (1992-11-01), Pfiester
patent: 5177583 (1993-01-01), Endo et al.
patent: 5198689 (1993-03-01), Fujioka
patent: 5202284 (1993-04-01), Kamins et al.
patent: 5207864 (1993-05-01), Bhat et al.
patent: 5208182 (1993-05-01), Narayan et al.
patent: 5212110 (1993-05-01), Pfiester et al.
patent: 5212112 (1993-05-01), Lynch
patent: 5217923 (1993-06-01), Suguro
patent: 5221413 (1993-06-01), Brasen et al.
patent: 5225703 (1993-07-01), Nakatani et al.
patent: 5240876 (1993-08-01), Gaul et al.
patent: 5241197 (1993-08-01), Murakami et al.
patent: 5242847 (1993-09-01), Ozturk et al.
patent: 5243207 (1993-09-01), Plumton et al.
patent: 5250445 (1993-10-01), Bean et al.
patent: 5285086 (1994-02-01), Fitzgerald
patent: 5291439 (1994-03-01), Kauffmann et al.
patent: 5294564 (1994-03-01), Karapiperis et al.
patent: 5298452 (1994-03-01), Meyerson
patent: 5304834 (1994-04-01), Lynch
patent: 5310451 (1994-05-01), Tejwani et al.
patent: 5316958 (1994-05-01), Meyerson
patent: 5334861 (1994-08-01), Pfiester et al.
patent: 5336903 (1994-08-01), Ozturk et al.
patent: 5346840 (1994-09-01), Fujioka
patent: 5346848 (1994-09-01), Grupen-Shemansky
patent: 5374564 (1994-12-01), Bruel
patent: 5399522 (1995-03-01), Ohori
patent: 5413679 (1995-05-01), Godbey
patent: 5424243 (1995-06-01), Takasaki
patent: 5426069 (1995-06-01), Selvakumar et al.
patent: 5426316 (1995-06-01), Mohammad
patent: 5442205 (1995-08-01), Brasen et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5462883 (1995-10-01), Dennard et al.
patent: 5476813 (1995-12-01), Naruse
patent: 5479033 (1995-12-01), Baca et al.
patent: 5484664 (1996-01-01), Kitaahara et al.
patent: 5496750 (1996-03-01), Moslehi
patent: 5496771 (1996-03-01), Cronin et al.
patent: 5523243 (1996-06-01), Mohammad
patent: 5523592 (1996-06-01), Nakagawa et al.
patent: 5534713 (1996-07-01), Ismail et al.
patent: 5536361 (1996-07-01), Kondo et al.
patent: 5540785 (1996-07-01), Dennard et al.
patent: 5571373 (1996-11-01), Krishna et al.
patent: 5572043 (1996-11-01), Shimizu et al.
patent: 5596527 (1997-01-01), Tomioka et al.
patent: 5617351 (1997-04-01), Bertin et al.
patent: 5630905 (1997-05-01), Lynch et al.
patent: 5633202 (1997-05-01), Brigham et al.
patent: 5659187 (1997-08-01), Legoues et al.
patent: 5659194 (1997-08-01), Iwamatsu et al.
patent: 5683934 (1997-11-01), Candelaria
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 5710450 (1998-01-01), Chau et al.
patent: 5714777 (1998-02-01), Ismail et al.
patent: 5728623 (1998-03-01), Mori
patent: 5739567 (1998-04-01), Wong
patent: 5759898 (1998-06-01), Ek et al.
patent: 5777347 (1998-07-01), Bartelink
patent: 5786612 (1998-07-01), Otani et al.
patent: 5786614 (1998-07-01), Chuang et al.
patent: 5792679 (1998-08-01), Nakato
patent: 5808344 (1998-09-01), Ismail et al.
patent: 5821577 (1998-10-01), Crabbe' et al.
patent: 5844260 (1998-12-01), Ohori
patent: 5847419 (1998-12-01), Imai et al.
patent: 5869359 (1999-02-01), Prabhakar
patent: 5876796 (1999-03-01), Regolini
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5877535 (1999-03-01), Matsumoto
patent: 5891769 (1999-04-01), Liaw et al.
patent: 5906708 (1999-05-01), Robinson et al.
patent: 5906951 (1999-05-01), Chu et al.
patent: 5912479 (1999-06-01), Mori et al.
patent: 5933741 (1999-08-01), Tseng
patent: 5943560 (1999-08-01), Chang et al.
patent: 5963817 (1999-10-01), Chu et al.
patent: 5966622 (1999-10-01), Levine et al.
patent: 5976939 (1999-11-01), Thompson et al.
patent: 5998807 (1999-12-01), Lustig et al.
patent: 6008111 (1999-12-01), Fushida et al.
patent: 6013134 (2000-01-01), Chu et al.
patent: 6030887 (2000-02-01), Desai et al.
patent: 6030889 (2000-02-01), Aulicino et al.
patent: 6033974 (2000-03-01), Henley et al.
patent: 6033995 (2000-03-01), Muller
patent: 6058044 (2000-05-01), Sugiura et al.
patent: 6059895 (2000-05-01), Chu et al.
patent: 6066563 (2000-05-01), Nagashima
patent: 6074919 (2000-06-01), Gardner et al.
patent: 6096590 (2000-08-01), Chan et al.
patent: 6096647 (2000-08-01), Yang et al.
patent: 6103559 (2000-08-01), Gardner et al.
patent: 6107653 (2000-08-01), Fitzgerald
patent: 6111267 (2000-08-01), Fischer et al.
patent: 6117750 (2000-09-01), Bensahel et al.
patent: 6121100 (2000-09-01), Andideh et al.
patent: 6130453 (2000-10-01), Mei et al.
patent: 6132806 (2000-10-01), Dutartre
patent: 6133124 (2000-10-01), Horstmann et al.
patent: 6133799 (2000-10-01), Favors et al.
patent: 6140687 (2000-10-01), Shimomura et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6153495 (2000-11-01), Kub et al.
patent: 6154475 (2000-11-01), Soref et al.
patent: 6159852 (2000-12-01), Nuttall et al.
patent: 6159856 (2000-12-01), Nagano
patent: 6160303 (2000-12-01), Fattaruso
patent: 6162688 (2000-12-01), Gardner et al.
patent: 6184111 (2001-02-01), Henley et al.
patent: 6187657 (2001-02-01), Xiang et al.
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6191432 (2001-02-01), Sugiyama et al.
patent: 6194722 (2001-02-01), Fiorini et al.
patent: 6204529 (2001-03-01), Lung et al.
patent: 6207977 (2001-03-01), Augusto
patent: 6210988 (2001-04-01), Howe et al.
patent: 6214679 (2001-04-01), Murthy et al.
patent: 6218677 (2001-04-01), Broekaert
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6232138 (2001-05-01), Fitzgerald et al.
patent: 6235567 (2001-05-01), Huang
patent: 6235568 (2001-05-01), Murthy et al.
patent: 6235575 (2001-05-01), Kasai et al.
patent: 6242324 (2001-06-01), Kub et al.
patent: 6242327 (2001-06-01), Yokoyama et al.
patent: 6246077 (2001-06-01), Kobayashi et al.
patent: 6249022 (2001-06-01), Lin et al.
patent: 6251755 (2001-06-01), Furukawa et al.
patent: 6251780 (2001-06-01), Sohn et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6266278 (2001-07-01), Harari et al.
patent: 6268257 (2001-07-01), Wieczorek et al.
patent: 6271551 (2001-08-01), Schmitz et al.
patent: 6271726 (2001-08-01), Fransis et al.
patent: 6281532 (2001-08-01), Doyle et al.
patent: 6291321 (2001-09-01), Fitzgerald
patent: 6294448 (2001-09-01), Chang et al.
patent: 6306698 (2001-10-01), Wieczorek et al.
patent: 6313016 (2001-11-01), Kibbel et al.
patent: 6313486 (2001-11-01), Kencke et al.
patent: 6315384 (2001-11-01), Ramaswami et al.
patent: 6316301 (2001-11-01), Kant
patent: 6316357 (2001-11-01), Lin et al.
patent: 6319799 (2001-11-01), Ouyang et al.
patent: 6319805 (2001-11-01), Iwamatsu et al.
patent: 6323108 (2001-11-01), Kub et al.
patent: 6326281 (2001-12-01), Violette et al.
patent: 6326664 (2001-12-01), Chau et al.
patent: 6329063 (2001-12-01), Lo et al.
patent: 6335546 (2002-01-01), Tsuda et al.
patent: 63392

Affiliated with

Also associated with

Rating

Methods of forming reacted conductive gate electrodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming reacted conductive gate electrodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming reacted conductive gate electrodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3721839