Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-09-11
2007-09-11
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S094000, C365S096000, C365S104000
Reexamination Certificate
active
11360670
ABSTRACT:
A semiconductor integrated circuit device includes a storage element, program circuit, and sensing circuit. The storage element stores information by electrically irreversibly changing the element characteristics. The program circuit programs the storage element by electrically irreversibly changing its element characteristics. The sensing circuit senses the irreversibly changed element characteristics of the storage element in distinction from an unchanged state. The program circuit includes a high-voltage generator which irreversibly changes the element characteristics of the storage element by applying a high voltage to it, and a current source which supplies an electric current to the storage element having element characteristics changed by the high-voltage generator, thereby stabilizing the element characteristics.
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Tran Anthan
Zarabian Amir
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