Trench transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S170000, C257S302000, C257S484000, C257SE29013

Reexamination Certificate

active

11067500

ABSTRACT:
A trench transistor has a cell array, in which at least one cell array trench (2) is provided, and an edge structure framing the cell array. An edge trench (15) spaced apart from the cell array trenches (2) is provided in the edge structure.

REFERENCES:
patent: 6388286 (2002-05-01), Baliga
patent: 2003/0047777 (2003-03-01), In't Zandt et al.
patent: 2004/0238884 (2004-12-01), Tanaka et al.
patent: 101 27 885 (2002-12-01), None
patent: WO2000/42665 (2000-07-01), None

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