Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-25
2007-09-25
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S170000, C257S302000, C257S484000, C257SE29013
Reexamination Certificate
active
11067500
ABSTRACT:
A trench transistor has a cell array, in which at least one cell array trench (2) is provided, and an edge structure framing the cell array. An edge trench (15) spaced apart from the cell array trenches (2) is provided in the edge structure.
REFERENCES:
patent: 6388286 (2002-05-01), Baliga
patent: 2003/0047777 (2003-03-01), In't Zandt et al.
patent: 2004/0238884 (2004-12-01), Tanaka et al.
patent: 101 27 885 (2002-12-01), None
patent: WO2000/42665 (2000-07-01), None
Henninger Ralf
Hirler Franz
Ho Tu-Tu
Infineon - Technologies AG
Maginot Moore & Beck
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