Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-12
2006-12-12
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S250000, C257S412000, C257S388000, C257S410000, C257SE29134
Reexamination Certificate
active
07148548
ABSTRACT:
A semiconductor device is described that comprises a gate dielectric and a metal gate electrode that comprises an aluminide.
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PCT/US2005/024489 Search Report & Written Opinion; dated Nov. 10, 2006.
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Kavalieros Jack
Engineer Rahul D.
Flynn Nathan J.
Wilson Scott R.
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