Photomask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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07147975

ABSTRACT:
A mask pattern includes a main pattern to be transferred through exposure and an auxiliary pattern that diffracts exposing light and is not transferred through the exposure. The main pattern is made from a shielding portion, a phase shifter or a combination of a semi-shielding portion or a shielding portion and a phase shifter. The auxiliary pattern is made from a shielding portion or a semi-shielding portion. The auxiliary pattern is disposed in a position away from the main pattern by a distance M×(λ/(2×sin φ)) or M×((λ/(2×sin φ))+(λ/(NA+sin φ))), wherein λ indicates a wavelength of the exposing light, M and NA indicate magnification and numerical aperture of a reduction projection optical system of an aligner and φ indicates an oblique incident angle.

REFERENCES:
patent: 6255024 (2001-07-01), Pierrat
patent: 6355382 (2002-03-01), Yasuzato et al.
patent: 6479194 (2002-11-01), Talor, Jr.
patent: 2001/0021477 (2001-09-01), Dirksen et al.
patent: 1241523 (2002-09-01), None
patent: 5-165194 (1993-06-01), None
patent: 06-019114 (1994-01-01), None
patent: 06-313964 (1994-11-01), None
patent: 9-73166 (1997-03-01), None
patent: WO 01/04838 (2001-01-01), None
patent: WO 02/091079 (2002-11-01), None

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