Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2006-12-05
2006-12-05
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S690000, C257S691000, C257S700000, C257S706000, C257S707000, C257S712000, C257S713000, C257S720000, C257S722000, C257S723000
Reexamination Certificate
active
07145224
ABSTRACT:
In the semiconductor device, a control power MOSFET chip2is disposed on the input-side plate-like lead5, and the drain terminal DT1is formed on the rear surface of the chip2, and the source terminal ST1and gate terminal GT1are formed on the principal surface of the chip2, and the source terminal ST1is connected to the plate-like lead for source12. Furthermore, a synchronous power MOSFET chip3is disposed on the output-side plate-like lead6, and the drain terminal DT2is formed on the rear surface of the chip3and the output-side plate-like lead6is connected to the drain terminal DT2. Furthermore, source terminal ST2and gate terminal GT2are formed on the principal surface of the synchronous power MOSFET chip3, and the source terminal ST2is connected to the plate-like lead for source13. The plate-like leads for source12and13are exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM1.
REFERENCES:
patent: 6693350 (2004-02-01), Teshima et al.
patent: 6891265 (2005-05-01), Mamitsu et al.
patent: 6917103 (2005-07-01), Hirano et al.
patent: 6960825 (2005-11-01), Mamitsu et al.
patent: 6963133 (2005-11-01), Teshima
patent: 2002-110893 (2002-04-01), None
patent: 2003-046036 (2003-02-01), None
Kawashima Tetsuya
Mishima Akira
Antonelli, Terry Stout and Kraus, LLP.
Clark Jasmine
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