High speed Ge channel heterostructures for field effect devices

Details High speed Ge channel heterostructures for field effect devices High speed Ge channel heterostructures for field effect devices

2006-12-05

2006-12-05

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S018000, C257S022000, C438S590000

Reexamination Certificate

active

07145167

ABSTRACT:
A method and a layered heterostructure for forming high mobility Ge channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, and a channel structure of a compressively strained epitaxial Ge layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility for complementary MODFETs and MOSFETs. The invention overcomes the problem of a limited hole mobility due to alloy scattering for a p-channel device with only a single compressively strained SiGe channel layer. This invention further provides improvements in mobility and transconductance over deep submicron state-of-the art Si pMOSFETs in addition to having a broad temperature operation regime from above room temperature (425 K) down to cryogenic low temperatures (0.4 K) where at low temperatures even high device performances are achievable.

REFERENCES:
patent: 5019882 (1991-05-01), Solomon et al.
patent: 5241197 (1993-08-01), Murakami et al.
patent: 5259918 (1993-11-01), Akbar et al.
patent: 5298452 (1994-03-01), Meyerson
patent: 5534713 (1996-07-01), Ismail et al.
patent: 5659187 (1997-08-01), Legoues et al.
patent: 05 121450 (1993-05-01), None
R. People and J.C. Bean, “Band Alignments Of Coherently Strained GeXSi1-X/ Si Heterostructures On <001> GeySi1-ySubstrates”; Appl. Phys. Lett. 48 (8); pp. 538-539; Feb. 24, 1986.
G. Hock et al., “High Performance 0.25 μm p-Type Ge/SiGe MODFETs”; Electronics Letters; vol. 34; No. 19; pp. 1888-1889; Sep. 17, 1998.
U. Konig and F. Schaffler, “p-Type Ge-Channel MODFET's With High Transconductance Grown On Si Substrates”; IEEE Electron Device Letters; vol. 14; No. 4; pp. 205-207; Apr. 1993.
M. Arafa, “A 70-GHzƒTLow Operating Bias Self-Aligned p-Type SiGe MODFET”; IEEE Electron Device Letters; vol. 17; No. 12; pp. 586-588; Dec. 1996.
U. Kong et al., “SiGe HBTs And HFETs”; IEEE Solid State Electronics; vol. 38; No. 9; pp. 1595-1602; Elsevier; 1995.
Milind Gokhale et al., “Enhanced Performace Of PMOS and CMOS Circuits Using Self-Aligned MOSFETs With Modulation Doped Si-Ge Channel”; Proceedings of the Tenth Biennial Univeristy/ Government/Industry Microelectronics Symposium; 1993 IEEE; US; New York; pp. 219-222; May 18-19, 1993.
David W. Greve, “Field Effect Devices And Applications”; Prentice-Hall, Inc; Simon & Schuster/ A Viacom Company; Upper Saddle River, NJ, 07458; Chap. 8: Structure Of The GaAs MESFET; p. 315; Table 8.1; 1998.

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