Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-26
2006-12-26
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S356000, C257S173000, C257SE27052, C438S133000
Reexamination Certificate
active
07154152
ABSTRACT:
A semiconductor device has a p-type substrate, a low-concentration n-type region formed in the p-type substrate, a first high-concentration p-type region formed in the low-concentration n-type region and connected to a first electrode, a first high-concentration n-type region formed in the low-concentration n-type region and connected via a resistive element to the first electrode, a low-concentration p-type region formed contiguously with the first high-concentration n-type region, a second high-concentration n-type region and a second high-concentration p-type region formed in the p-type substrate and connected to a second electrode, and an element separator portion formed between the low-concentration p-type region and the second high-concentration n-type region. This makes it possible to control the switching characteristic of the electrostatic protection circuit with high accuracy and thus to cope with the thinning of the gate oxide film protected by the protection circuit.
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Arent & Fox PLLC
Budd Paul
Parker Kenneth
Rohm & Co., Ltd.
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