Methods to improve the SiGe heterojunction bipolar device...

Details Methods to improve the SiGe heterojunction bipolar device... Methods to improve the SiGe heterojunction bipolar device...

2006-12-05

2006-12-05

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S373000, C257S197000, C257SE29188

Reexamination Certificate

active

07144787

ABSTRACT:
Methods of boosting the performance of bipolar transistor, especially SiGe heterojunction bipolar transistors, is provided together with the structure that is formed by the inventive methods. The methods include providing a species-rich dopant region comprising C, a noble gas, or mixtures thereof into at least a collector. The species-rich dopant region forms a perimeter or donut-shaped dopant region around a center portion of the collector. A first conductivity type dopant is then implanted into the center portion of the collector to form a first conductivity type dopant region that is laterally constrained, i.e., confined, by the outer species-rich dopant region.

REFERENCES:
patent: 6265275 (2001-07-01), Marty et al.
patent: 6534371 (2003-03-01), Coolbaugh et al.
patent: 6563146 (2003-05-01), Yuki et al.
patent: 2002/0177253 (2002-11-01), Johnson et al.
patent: 2003/0173580 (2003-09-01), Coolbaugh et al.
patent: 2005/0023642 (2005-02-01), Heinemann et al.

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