Semiconductor light emitting devices with graded composition...

Details Semiconductor light emitting devices with graded composition... Semiconductor light emitting devices with graded composition...

2006-10-17

2006-10-17

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S103000

Reexamination Certificate

active

07122839

ABSTRACT:
A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1−xN, AlxGa1−xN, or InxAlyGa1−x−yN.

REFERENCES:
patent: 6515313 (2003-02-01), Ibbetson et al.
patent: 6955933 (2005-10-01), Bour et al.
patent: 2003/0020085 (2003-01-01), Bour et al.

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