Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-22
2006-08-22
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21665, C257SE43004, C365S171000, C365S173000
Reexamination Certificate
active
07095071
ABSTRACT:
According to an aspect of the present invention, there is disclosed a magnetic resistive element comprising a first magnetic layer whose magnetized state changes in accordance with data, a nonmagnetic layer disposed on the first magnetic layer, and a second magnetic layer which is disposed on the nonmagnetic layer and whose magnetized state is fixed, wherein the first magnetic layer has a cross shape in which a maximum length of a first direction is L1and a maximum length of a second direction crossing the first direction at right angles is L2, and the second magnetic layer has a tetragonal shape in which the maximum length of the first direction is L3(≦L1) and the maximum length of the second direction is L4(<L2).
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Fukuzumi Yoshiaki
Takahashi Shigeki
Nelms David
Nguyen Dao H.
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