Integrated circuit with self-aligned line and via and...

Details Integrated circuit with self-aligned line and via and... Integrated circuit with self-aligned line and via and...

2006-10-10

2006-10-10

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C438S700000, C257S774000

Reexamination Certificate

active

07119010

ABSTRACT:
An integrated circuit and manufacturing method therefor is provided having a base with a first dielectric layer formed thereon. A second dielectric layer is formed over the first dielectric layer. A third dielectric layer is formed in spaced-apart strips over the second dielectric layer. A first trench opening is formed through the first and second dielectric layers between the spaced-apart strips of the third dielectric layer. A second trench opening is formed contiguously with the first trench opening through the first dielectric layer between the spaced-apart strips of the third dielectric layer. Conductor metals in the trench openings form self-aligned trench interconnects.

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patent: 1 928 460 (2000-08-01), None
patent: 1184903 (2000-08-01), None

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